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42 pages, yr 2003, lectures

Abstract:

The lectures "review the prospects for the development and practical introduction of ultrasmall electron devices, including nanoscale field-effect transistors (FETs) and single-electron transistors (SETs), as well as new concepts for nanometer-scalable memory cells. Physics allows silicon FETs to be scaled down to >>3 nm gate length, but below >>10 nm the devices are extremely sensitive to minute (sub-nanometer) fabrication spreads. This sensitivity may send the fabrication facilities costs (high even now) skyrocketing, and lead to the end of the Moore Law some time during the next decade. Lithographically defined SETs can hardly be a panacea, since the critical dimension of such transistor (its single-electron island size) for the room temperature operation should be below >>1 nm." Keywords: nanoelectronics, electron devices, memory cells, logic http://pavel.physics.sunysb.edu/~likharev/personal/NanoGiga.pdf

Rights:

http://pavel.physics.sunysb.edu/~likharev/personal/NanoGiga.pdf Open access

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